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 NSR15TW1 Triple RF Schottky Diode
These diodes are designed for analog and digital applications, including DC based signal detection and mixing applications.
Features:
* Low Capacitance (<1 pF) * Low VF (390 mV typical @ 1 mA) * Low VFD (1 mV typical @ 1 mA)
Benefits:
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* Reduced Parasitic Losses * Accurate Signal Measurement
MAXIMUM RATINGS
Rating Peak Reverse Voltage Forward Current Operating and Storage Temperature Range ESD Rating: Class 1 per Human Body Model ESD Rating: Class A per Machine Model Symbol VR IF TJ, Tstg Max 15 30 -65 to +150 Unit V mA C
RF SCHOTTKY BARRIER DIODES 15 VOLTS, 30 mA
6
5
4
1
2
3
THERMAL CHARACTERISTICS
Characteristic Maximum Thermal Resistance - Junction to Ambient Symbol RqJA Value 500 Unit C/W 1 2 3
6
5
4
SC-88 CASE 419B STYLE 15
MARKING DIAGRAM
OZ M
OZ = Specific Device Code M = Date Code
ORDERING INFORMATION
Device NSR15TW1T2 Package SC-88 Shipping 3000/Tape & Reel
(c) Semiconductor Components Industries, LLC, 2002
1
February, 2002 - Rev. 1
Publication Order Number: NSR15TW1/D
NSR15TW1
ELECTRICAL CHARACTERISTICS
Characteristic Breakdown Voltage (IR = 10 mA) Reverse Leakage (VR = 1 V) Forward Voltage (IF = 1 mA) Forward Voltage (IF = 10 mA) Delta VF (IF = 1 mA, All Diodes) Capacitance (VF = 0 V, f = 1 MHz) Symbol VBR IR VF1 VF2 DVF CT Min 15 - - - - - Typ 20 2 390 530 1 0.8 Max - 50 415 680 15 1 Unit V nA mV mV mV pF
100 IF, FORWARD CURRENT (mA)
100 k IR, REVERSE CURRENT (nA)
10 k
10 25C
125C
75C 1 125C 0.1 -25C
1k
75C
100 25C 10 1
0.01
0
0.1
0.2 0.3 0.4 0.5 VF, FORWARD VOLTAGE (V)
0.6
0.7
0
5 10 VR, REVERSE VOLTAGE (V)
15
Figure 1. Forward Current versus Forward Voltage at Temperatures
Figure 2. Reverse Current versus Reverse Voltage
1
1000 RD, DYNAMIC RESISTANCE (W) 0 1 2 3 4 5 6 VR, REVERSE VOLTAGE (V) 7 8
CT, CAPACITANCE (pF)
0.9
100
0.8
0.7
10
0.6 0.5
1 0.1 1 10 IF, FORWARD CURRENT (mA) 100
Figure 3. Total Capacitance versus Reverse Voltage
Figure 4. Dynamic Resistance versus Forward Current
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NSR15TW1
DVF, FORWARD VOLTAGE DIFFERENCE (mV) IF, FORWARD CURRENT (mA) 100 IF, FORWARD CURRENT (mA) IF (left scale) 10 DVF (right scale) 1 1 100 100 10 DVF, FORWARD VOLTAGE DIFFERENTIAL (mV)
IF (left scale)
10
10
1
DVF (right scale)
0.1
0.3
0.4
0.5 0.6 0.7 VF, FORWARD VOLTAGE (V)
0.8
0.1
1
0.1 0.175 0.225 0.275 VF, FORWARD VOLTAGE (V) 0.325
Figure 5. Typical VF Match at Mixer Bias Levels
Figure 6. Typical VF Match at Detector Bias Levels
1 DC Bias = 3 mA
10 1 0.1 VDET, (Vdc) 0.01 0.001 RF IN 68 W NSR15TW1 VO 4.7 kW
VDET, (Vdc)
0.1
RF IN 0.01 3.3 nH
NSR15TW1 18 nH 100 pF
VO 100 kW
0.0001 0.00001
100 pF
0.001 -40
-35
-30 -25 -20 -15 -10 Pin, INPUT POWER (dBm)
-5
0
0.000001 -20 -15 -10
5 10 15 -5 0 Pin, INPUT POWER (dBm)
20
25
30
Figure 7. Typical Output Voltage versus Input Power, Small Signal Detector Operating at 850 MHz
Figure 8. Typical Output Voltage versus Input Power, Large Signal Detector Operating at 915 MHz
12
CONVERSION LOSS (dB)
10
9
8
7 6 -2
0
2 4 6 8 10 LOCAL OSCILLATOR POWER (dBm)
12
Figure 9. Typical Conversion Loss versus L.O. Drive, 2.0 GHz
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3
NSR15TW1
PACKAGE DIMENSIONS
SC-88 (SOT-363) CASE 419B-01 ISSUE G
A G V
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A B C D G H J K N S V INCHES MIN MAX 0.071 0.087 0.045 0.053 0.031 0.043 0.004 0.012 0.026 BSC --0.004 0.004 0.010 0.004 0.012 0.008 REF 0.079 0.087 0.012 0.016 MILLIMETERS MIN MAX 1.80 2.20 1.15 1.35 0.80 1.10 0.10 0.30 0.65 BSC --0.10 0.10 0.25 0.10 0.30 0.20 REF 2.00 2.20 0.30 0.40
6
5
4
S
1 2 3
-B-
D 6 PL
0.2 (0.008) N
M
B
M
J C
STYLE 15: PIN 1. ANODE 2. ANODE 3. ANODE 4. CATHODE 5. CATHODE 6. CATHODE
H
K
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
PUBLICATION ORDERING INFORMATION
Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: ONlit@hibbertco.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada JAPAN: ON Semiconductor, Japan Customer Focus Center 4-32-1 Nishi-Gotanda, Shinagawa-ku, Tokyo, Japan 141-0031 Phone: 81-3-5740-2700 Email: r14525@onsemi.com ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative.
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4
NSR15TW1/D


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